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Datasheet File OCR Text: |
to-92l plastic-encapsulate transistors 2SC2500 transistor (npn) features z strobe flash applications z medium power amplifier applications maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 10 v v ebo emitter-base voltage 6 v i c collector current -continuous 2 a p c collector power dissipation 900 mw t j junction temperature 150 t stg storage temperature -55 to +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 10 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 6 v collector cut-off current i cbo v cb =30v,i e =0 0.1 a emitter cut-off current i ebo v eb =6v,i c =0 0.1 a h fe(1) v ce =1v,i c =500ma 140 600 dc current gain h fe(2) v ce =1v,i c =2a 70 collector-emitter saturation voltage v ce(sat) i c =2a,i b =50ma 0.5 v base-emitter voltage v be v ce =1v,i c =2a 1.5 v transition frequency f t v ce =1v,i c =500ma 150 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 27 pf classification of h fe(1) rank a b c d range 140-240 200-330 300-450 420-600 to-92l 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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